Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System
- 1 January 2007
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 154 (2) , D95-D101
Abstract
Ru thin films were grown on Si, SiO2SiO2 , TiO2TiO2 , and TiN substrates by atomic-layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O2O2 as Ru precursor and reactant, respectively, at temperatures ranging from 230to280°C230to280°C . A saturated growth rate of 0.04nm∕cycle0.04nm∕cycle and a low oxygen concentration (below the detection limit of Auger electron spectroscopy) were obtained at 250°C250°C . The Ru film showed a negligible incubation period on all the different types of substrates, and an active nucleation behavior which resulted in a very smooth film surface morphology. The dimethylpentadienyl ligand enhanced the active nucleation of Ru and retarded the oxidation of the grown Ru layer. Good step coverage (90%)(90%) was obtained from the Ru film grown on a capacitor hole with an aspect ratio of 17 and an opening diameter of 150nm150nm by a proper control of the Ar carrier gas flow rate.Keywords
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