Preparation and Ferroelectric Properties of Ho3+/Mo6+ Cosubstituted Bi4Ti3O12 Thin Films by Sol–Gel Method
Authors:
- 10 November 2009
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 39 (2) , 258-261
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Ferroelectric properties of Bi4−xLaxTi3O12 (x=0, 0.75) thin films prepared by sol–gel methodMaterials Science and Engineering: B, 2007
- Direct observation of oxygen stabilization in layered ferroelectric Bi3.25La0.75Ti3O12Applied Physics Letters, 2007
- Applications of Modern FerroelectricsScience, 2007
- Stress effects on ferroelectric and fatigue properties of Nd- and La-doped Bi4Ti3O12 thin filmsApplied Physics Letters, 2005
- Lanthanum-substituted bismuth titanate for use in non-volatile memoriesNature, 1999
- Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin filmsApplied Physics Letters, 1993
- Ferroelectric MemoriesScience, 1989
- Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenidesActa Crystallographica Section A, 1976
- Ferroelectricity in the CompoundPhysical Review B, 1962
- Ferroelectricity in and Its Solid SolutionsPhysical Review B, 1961