Reliability of SiGe HBTs for Power Amplifiers—Part I: Large-Signal RF Performance and Operating Limits
Authors:
- 16 June 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Device and Materials Reliability
- Vol. 9 (3) , 431-439
Abstract
This paper examines the performance and reliability implications associated with aggressively biased cascode SiGe HBT power-amplifier cores under large-signal RF operating conditions. The role of high-power RF stress on device degradation and failure is examined in detail. General expressions for a large-signal RF safe-operating area, which account for the effect of load impedance on the dynamic output current and voltage characteristics, are presented. These show excellent agreement with experimental results. Useful operating guidelines for reliable large-signal operation are provided.Keywords
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