Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition

This publication has 31 references indexed in Scilit:

• High dielectric constant gate oxides for metal oxide Si transistors
  Reports on Progress in Physics, 2005
• In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition
  Applied Physics Letters, 2005
• Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
  Angewandte Chemie International Edition, 2003
• Chemie der Atomlagenabscheidung (Atomic Layer Deposition): jüngste Entwicklungen
  Angewandte Chemie, 2003
• Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
  Applied Physics Letters, 2003
• Atomic layer deposition (ALD): from precursors to thin film structures
  Thin Solid Films, 2002
• Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
  Chemistry of Materials, 2001
• High-κ gate dielectrics: Current status and materials properties considerations
  Journal of Applied Physics, 2001
• Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
  Science, 2000
• Initial Stage of the Ultrathin Oxide Growth in Water Vapor on Si(100) Surface
  Electrochemical and Solid-State Letters, 1999