Dislocation density of lattice mismatched epitaxial layers
Authors:
- K. TamamuraKTK. Tamamura
- K. AkimotoKAK. Akimoto
- Y. MoriYMY. Mori
- 30 April 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (4) , 821-828
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1987
- Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAsApplied Physics Letters, 1987
- Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substratesApplied Physics Letters, 1987
- Lattice relaxation of InAs heteroepitaxy on GaAsJournal of Crystal Growth, 1987
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983
- Studies by cross-sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substratesApplied Physics Letters, 1980
- Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam depositionApplied Physics Letters, 1978
- Molecular Beam Epitaxial Growth of InAsJapanese Journal of Applied Physics, 1977
- Compositional profile of heteroepitaxial InAs on GaAs substratesThin Solid Films, 1976