Surface segregation of third-column atoms in III–V ternary arsenides
Authors:
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 35-37
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Intermixing at InAs/GaAs and GaAs/InAs interfacesSurface Science, 1987
- Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxyJournal of Crystal Growth, 1987
- Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Effect of temperature on the Ge/GaAs(110) interface formationSurface Science, 1983
- Photoemission studies of(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1982