Proposal for variability-induced effective radius of elliptical gate-all-around junctionless transistors and its applicability in hydrogen gas sensors

This publication has 43 references indexed in Scilit:

• A nanoscale junctionless FET to amend the electric field distribution using a β-Ga2O3 packet
  Journal of Materials Science: Materials in Electronics, 2023
• Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
  Journal of Computational Electronics, 2022
• Sputter-Grown Pd-Capped CuO Thin Films for a Highly Sensitive and Selective Hydrogen Gas Sensor
  Journal of Electronic Materials, 2020
• Hetero-Dielectric oxide engineering on dopingless gate all around nanowire MOSFET with Schottky contact source/drain
  AEU - International Journal of Electronics and Communications, 2019
• Magnetic Field Effect on Threshold Voltage for Ultrathin Silicon Gate-All-Around Nanowire Field-Effect-Transistors
  Silicon, 2019
• Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
  Microelectronics Journal, 2016
• Impact of elliptical cross-section on the propagation delay of multi-channel gate-all-around MOSFET based inverters
  Microelectronics Journal, 2013
• An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET
  Microelectronics Journal, 2012
• Multi-gate SOI MOSFETs
  Microelectronic Engineering, 2007
• MOSFET test structures for two-dimensional device simulation
  Solid-State Electronics, 1995