The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices
Authors:
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1152-1158
Abstract
The role of hydrogen in the generation of radiation-induced interface-trap and oxide-trapped charge in MOS polysilicon gate capacitors has been investigated. The concentration of radiation-induced interface-trap and oxide-trapped charge measured both immediately after irradiation and after postirradiation anneal increases if high temperature anneals are performed in hydrogen. We have analyzed these results in the context of several models of interface-trap and oxide-trapped charge formation. The mutual increase in the concentration of oxide-trapped charge and the early-time (1 msec to 10 sec) component of interface-trap charge with the amount of hydrogen used during processing suggests that the breaking of Si-H or Si-OH bonds may be responsible for much of the defect formation at or near the silicon/silicon dioxide interface.Keywords
This publication has 23 references indexed in Scilit:
- Spatial distribution of radiation-induced interface traps under the gate of an Al/SiO2/Si capacitorApplied Physics Letters, 1985
- Dependence of radiation-induced interface traps on gate Al thickness in metal/SiO2/Si structuresJournal of Applied Physics, 1984
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interfaceApplied Physics Letters, 1982
- Effect of Photon Energy on the Response of MOS DevicesIEEE Transactions on Nuclear Science, 1981
- LATERAL NONUNIFORMITIES (LNU) OF OXIDE AND INTERFACE STATE CHARGE1978
- Frequency and temperature tests for lateral nonuniformities in MIS capacitorsIEEE Transactions on Electron Devices, 1977
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitorsApplied Physics Letters, 1975
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962