Introduction of a New Carrier System for Collective Die-to-Wafer Hybrid Bonding and Laser-Assisted Die Transfer
Authors:
- 1 June 2020
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 296-302
Abstract
Current roadblocks within the collective die-to-wafer bonding flow, limiting die-transfer yield and throughput, are identified and discussed. Based on the obtained assessment a new carrier system is introduced. The use of the ultra-soft and highly-UV-transparent BrewerBOND ® C1301 material and its compatibility with BrewerBOND ® 701 laser release material, which is coated on top of ultra-thin dies, allows for a room temperature, ultra-low force collective bonding with laser-assisted die transfer sequence.Keywords
This publication has 9 references indexed in Scilit:
- Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems2019
- Development of Low Temperature Direct Bond Interconnect Technology for Die-To-Wafer and Die-To-Die Applications-Stacking, Yield Improvement, Reliability Assessment2018
- Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology2018
- Scaling Package Interconnects Below 20µm Pitch with Hybrid Bonding2018
- On the feasibility of die-to-wafer inorganic dielectric bonding2016
- Permanent wafer bonding in the low temperature by using various plasma enhanced chemical vapour deposition dielectrics2015
- Chip to wafer direct bonding technologies for high density 3D integration2012
- First integration of Cu TSV using die-to-wafer direct bonding and planarization2009
- An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling2009