Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si
Authors:
- Sandeep KumarSKSandeep Kumar
- Himanshu KumarHKHimanshu Kumar
- Sandeep VuraSVSandeep Vura
- Anamika Singh PratiyushAPAnamika Singh Pratiyush
- Vanjari Sai CharanVCVanjari Sai Charan
- Surani B. DolmananSDSurani B. Dolmanan
- Sudhiranjan TripathySudhiranjan Tripathy
- Rangarajan MuralidharanRMRangarajan Muralidharan
- Digbijoy N. NathDNDigbijoy N. Nath
- 25 January 2019
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 66 (3) , 1230-1235
Abstract
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Funding Information
- MHRD through NIEIN Project
- MeitY and DST through NNetRA
This publication has 37 references indexed in Scilit:
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