Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells
Authors:
- 30 December 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (27) , 3619-3621
Abstract
Laser diode action in the blue‐green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p‐n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n‐ or p‐type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n‐type and p‐type GaAs epitaxial buffer layers and substrates.Keywords
This publication has 9 references indexed in Scilit:
- Low threshold pulsed and continuous-wave laser action in optically pumped (Zn,Cd)Se/ZnSe multiple quantum well lasers in the blue-greenApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Room-temperature exciton absorption in (Zn,Cd)Se/ZnSe quantum wells at blue-green wavelengthsApplied Physics Letters, 1990
- Laser action in the blue-green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structuresApplied Physics Letters, 1990
- Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substratesApplied Physics Letters, 1990
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructuresApplied Physics Letters, 1990
- Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayersApplied Physics Letters, 1987