Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
Authors:
- V. HoelVHV. Hoel
- E. MorvanEME. Morvan
- E. DelosEDE. Delos
- B. GrimbertBGB. Grimbert
- H. LahrecheHLH. Lahreche
- P. BovePBP. Bove
- C. GaquiereCGC. Gaquiere
- J.C. De JaegerJJJ.C. De Jaeger
- S. DelageSDS. Delage
- 19 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (1) , 7-9
Abstract
Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F/sub T/) of 50 GHz are achieved for a 0.25 /spl mu/m gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2/spl times/50/spl times/0.25 /spl mu/m/sup 2/ HEMT with a power gain of 9.1dB.Keywords
This publication has 10 references indexed in Scilit:
- Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopyThe European Physical Journal Applied Physics, 2005
- AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHzElectronics Letters, 2004
- AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHzIEEE Electron Device Letters, 2004
- High Microwave and Noise Performance of 0.17-$muhbox m$AlGaN–GaN HEMTs on High-Resistivity Silicon SubstratesIEEE Electron Device Letters, 2004
- High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface PassivationIEEE Electron Device Letters, 2004
- Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditionsIEEE Transactions on Microwave Theory and Techniques, 2003
- AlGaN/GaN HEMTs on SiC: towards power operation at V-band2003
- AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noiseIEEE Transactions on Electron Devices, 2001
- Pulsed bias/pulsed RF characterization measurement system of FET at constant intrinsic voltagesMicrowave and Optical Technology Letters, 1999
- An automated system for measuring power devices in Ka-bandIEEE Transactions on Microwave Theory and Techniques, 1998