Confirmation of AlGaAs Crystal Domain Inversion Using Asymmetric Wet Etching and Optical Second-Harmonic Generation Methods
Authors:
- Chang-Qing XuCXChang-Qing Xu
- Keizo TakemasaKTKeizo Takemasa
- Koji NakamuraKNKoji Nakamura
- Hiroshi WadaHWHiroshi Wada
- Takeshi TakamoriTTTakeshi Takamori
- Hideaki OkayamaHOHideaki Okayama
- Takeshi KamijohTKTakeshi Kamijoh
- 1 November 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (11A) , L1419-1421
Abstract
The occurrence of crystal domain inversion on a (001) GaAs substrate was confirmed by a direct observation method based on asymmetric wet etching of AlGaAs and an optical method based on second-harmonic generation. Direct evidence of crystalline inversion was exhibited in samples with a periodic structure prepared by wafer bonding, selective removal of the bonded GaAs, and metal-organic vapor phase epitaxial regrowth on the patterned template.Keywords
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