Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor
- 7 May 2015
- journal article
- research article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 21 (4-5-6) , 88-93
Abstract
The effect of substrate temperature (TS) on the growth rate, chemical structure, surface morphology, density, refractive index, and optical absorption of a‐SiCO:H films is reported. The increase in TS from 30 °C to 350 °C involves the transformation of the film from polymeric, low‐density material to strongly cross‐linked, dense Si‐oxycarbide ceramics.Keywords
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