Aleksander M. Wrobel

Amorphous hydrogenated silicon oxycarbide (a‐SiCO:H) thin films are produced by remote microwave hydrogen plasma CVD using 1,1,3,3‐tetramethyldisiloxane precursor. The effect of substrate temperature (T_S) on the chemical structure and some properties of resulting a‐SiCO:H films is reported. The examination performed by infrared spectroscopy revealed that the increase in T_S involves the elimination of organic moieties from the film and its transformation from polymer‐like to ceramic‐like high‐crosslink‐density material. Due to their small surface roughness, high density, and good optical transparency, the a‐SiCO:H films seem to be useful coatings for optical and electronic devices.

The effect of substrate temperature (T_S) on the growth rate, chemical structure, surface morphology, density, refractive index, and optical absorption of a‐SiCO:H films is reported. The increase in T_S from 30 °C to 350 °C involves the transformation of the film from polymeric, low‐density material to strongly cross‐linked, dense Si‐oxycarbide ceramics.

The effect of substrate temperature (T_S) on the chemical structure, surface morphology, density, and adhesion to a substrate of a‐SiC:H films is reported. The increase in T_S from 30 °C to 400 °C causes the elimination of organic moieties from the film and the formation of Si‐carbidic network. The films produced at high T_S are morphologically homogeneous, dense, and strongly adhere to coatings.