a‐InGaZnO thin‐film transistors for AMOLEDs: Electrical stability and pixel‐circuit simulation
Authors:
- Charlene ChenCCCharlene Chen
- Katsumi AbeKAKatsumi Abe
- Hideya KumomiHKHideya Kumomi
- Jerzy KanickiJKJerzy Kanicki
- 18 June 2009
- journal article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 17 (6) , 525-534
Abstract
Abstract— Inverted‐staggered amorphous In‐Ga‐Zn‐O (a‐InGaZnO) thin‐film transistors (TFTs) were fabricated and characterized on glass substrates. The a‐InGaZnO TFTs exhibit adequate field‐effect mobilities, sharp subthreshold slopes, and very low off‐currents. The current temperature stress (CTS) on the a‐InGaZnO TFTs was performed, and the effect of stress temperature (TSTR), stress current (ISTR), and TFT biasing condition on their electrical stability was investigated. Finally, SPICE modelling for a‐InGaZnO TFTs was developed based on experimental data. Several active‐matrix organic light‐emitting‐display (AMOLED) pixel circuits were simulated, and the potential advantages of using a‐InGaZnO TFTs were discussed.Keywords
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