Investigation on the Carrier Dynamics in P-I-N Type Photovoltaic Devices with Different Step-Gradient Distribution of Indium Content in the Intrinsic Region

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Abstract
InGaN-based photovoltaic devices have attracted great attention due to their remarkable theoretical potential for high efficiency. In this paper, the influence of different distributions of step-gradient indium content within the intrinsic region on the photovoltaic performance of P-I-N type InGaN/GaN solar cells is numerically investigated. Through the comprehensive analysis of carrier dynamics, it is found that for the device with the indium content decreasing stepwise from 50% at the top to 10% at the bottom in intrinsic region, the photovoltaic conversion efficiency is increased to 10.29%, which can be attributed to joint influence of enhanced photon absorption, reduced recombination rate, and optimized carrier transport process.
Funding Information
  • Aviation Science Foundation of China (2024M073053002, 62074129, 2023-YBGY-455)
  • National Natural Science Foundation of China (2024M073053002, 62074129, 2023-YBGY-455)
  • Key Research and Development Projects of Shaanxi Province (2024M073053002, 62074129, 2023-YBGY-455)

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