Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing
Authors:
- Mark P. BazeMBMark P. Baze
- Bharat L. BhuvaBBBharat L. Bhuva
- Arthur F. WitulskiAWArthur F. Witulski
- Sandeepan DasGuptaSDSandeepan DasGupta
- Andrew L. SternbergASAndrew L. Sternberg
- Patrick R. FlemingPFPatrick R. Fleming
- Christopher C. HeathCHChristopher C. Heath
- Michael L. AllesMAMichael L. Alles
- 12 December 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 54 (6) , 2584-2589
Abstract
Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell (DICE latch) shows significant directional sensitivity results impacting observed cross-section and LET thresholds. 3-D TCAD simulations show this directional effect is due to charge sharing and parasitic bipolar effects due to n-well potential collapse.Keywords
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