A 2–10 GHz Common Gate UWB Low Noise Amplifier in 90 nm CMOS
- 12 July 2022
- book chapter
- Published by Springer Nature
- p. 295-305
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Cascode Stage Based LNA for Bluetooth Applications in 45 nm CMOS Technology2017
- Design of Wideband LNA Employing Cascaded Complimentary Common Gate and Common Source StagesIEEE Microwave and Wireless Components Letters, 2017
- LNA with wide range of gain control and wideband interference rejectionInternational Journal of Electronics, 2016
- A Low-Power Full-Band Low-Noise Amplifier for Ultra-Wideband ReceiversIEEE Transactions on Microwave Theory and Techniques, 2010
- An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-$\mu$m CMOSIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 2007
- Low-Power Programmable Gain CMOS Distributed LNAIEEE Journal of Solid-State Circuits, 2006
- An ultra-wideband CMOS low noise amplifier for 3-5-GHz UWB systemIEEE Journal of Solid-State Circuits, 2005
- An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receiversIEEE Journal of Solid-State Circuits, 2004
- A fully integrated 0.5-5.5 GHz CMOS distributed amplifierIEEE Journal of Solid-State Circuits, 2000
- Noise Figures of Radio ReceiversProceedings of the IRE, 1944