Phase-field approach to heterogeneous nucleation
Author:
- 21 January 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 67 (3) , 035412
Abstract
We consider the problem of heterogeneous nucleation and growth. The system is described by a phase-field model in which the temperature is included through thermal noise. We show that this phase-field approach is suitable to describe homogeneous as well as heterogeneous nucleation starting from several general hypotheses. Thus we can investigate the influence of grain boundaries, localized impurities or any general kind of imperfections in a systematic way. We also put forward the applicability of our model to study other physical situations such as island formation, amorphous crystallization, or recrystallization.Keywords
All Related Versions
This publication has 39 references indexed in Scilit:
- Spatiotemporal Distribution of Nucleation Events during Crystal GrowthPhysical Review Letters, 2001
- Lattice model for kinetics and grain-size distribution in crystallizationPhysical Review B, 2000
- Model for crystallization kinetics: Deviations from Kolmogorov–Johnson–Mehl–Avrami kineticsApplied Physics Letters, 1999
- Homogeneous NucleationJournal of Statistical Physics, 1999
- Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glassThin Solid Films, 1999
- Recrystallization and textureProgress in Materials Science, 1997
- Polycrystalline Silicon on Glass Substrates for Thin Film Solar CellsSolid State Phenomena, 1996
- Crystalline Si Films for Integrated Active-Matrix Liquid-Crystal DisplaysMRS Bulletin, 1996
- A stacked-CMOS cell technology for high-density SRAM'sIEEE Transactions on Electron Devices, 1992
- Theory for the nucleation of a crystalline droplet from the meltPhysical Review B, 1985