On the influence of a gaseous boundary layer on the oxidation of reaction-bonded silicon nitride at 1400° C
Authors:
- 1 January 1979
- journal article
- letter
- Published by Springer Nature in Journal of Materials Science
- Vol. 14 (1) , 235-237
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Development of a Turbine Rotor of Silicon NitrideMaterialwissenschaft und Werkstofftechnik, 1977
- A Simple Thermochemical Model for the Si-Al-O-N System1977
- Oxidation of Silicon Nitride and Related Materials1977
- Some effects of Al and O2 on the nitridation of silicon compactsJournal of Materials Science, 1976
- The Active Oxidation of Si and SiC in the Viscous Gas‐Flow RegimeJournal of the Electrochemical Society, 1976
- Passivity during the Oxidation of Silicon at Elevated TemperaturesJournal of Applied Physics, 1958