A Novel Three-State RF MEMS Switch for Ultrabroadband (DC-40 GHz) Applications
- 9 July 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (8) , 1062-1064
Abstract
Design, fabrication, and measurement results of a lateral dc-contact RF microelectromechanical systems switch for ultrabroadband applications are presented in this letter. The switch is driven by a bidirectional cascaded electrothermal actuator, which can generate larger displacements and contact forces at two directions than traditional electrothermal actuators. Because of this bidirectional actuator, the proposed switch can not only realize the off-state to on-state shifting, but also provide an additional deep off-state. The proposed switch is fabricated by MetalMUMPs process, and measurement results show that the insertion loss is less than -0.5 dB and the initial isolation is better than -22.5 dB at 0-40 GHz range. At the deep off-state, the isolation better than -30 dB can be achieved at the whole frequency range 0-40 GHz. The measurement results agree well with the theory and design.Keywords
This publication has 7 references indexed in Scilit:
- Lateral Contact Three-State RF MEMS Switch for Ground Wireless Communication by Actuating Rhombic StructuresJournal of Microelectromechanical Systems, 2012
- Thermally Actuated Latching RF MEMS Switch and Its CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 2009
- An in-plane, bi-directional electrothermal MEMS actuatorJournal of Micromechanics and Microengineering, 2006
- RF MEMS membrane switches on GaAs substrates for X-band applicationsJournal of Microelectromechanical Systems, 2005
- Steady state thermal analysis and high-power reliability considerations of RF MEMS capacitive switches2003
- RF MEMS switches and switch circuitsIEEE Microwave Magazine, 2001
- Surface-micromachined electrostatic microrelaySensors and Actuators A: Physical, 1998