Determination of Elastic and Piezoelectric Properties of Al0.84Sc0.16N Thin Films
- 1 October 2018
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-5
Abstract
In this work, bar-and disk-shaped resonators were fabricated using Al 0.84 Sc 0.16 N thin film. Sensitivity analysis of the resonators' resonance frequencies with respect to the piezoelectric material parameters revealed that resonance analysis can be used for material parameter extraction. An optimization algorithm is employed to determine the piezoelectric material parameters s 11 E , s 12 E , and d 31 of Al 0.84 Sc 0.16 N from the length-and radial-extensional mode. Using the piezoelectric constitutive equations and combining the results obtained in this work with the results obtained in a previous work, the stress-charge form of elastic and piezoelectric parameters could be derived.Keywords
This publication has 9 references indexed in Scilit:
- Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin FilmsPhysica Status Solidi (a), 2018
- Vibration characteristics of a piezoelectric disk laminated with an elastic diskJournal of Mechanical Science and Technology, 2016
- Erratum: Piezoelectric coefficients and spontaneous polarization of ScAlN (2015 J. Phys. Condens. Matter 27 245901)Journal of Physics: Condensed Matter, 2015
- Determination of full material constants of ScAlN thin film from bulk and leaky Lamb waves in MEMS-based samples2014
- Elastic constants and critical thicknesses of ScGaN and ScAlNJournal of Applied Physics, 2013
- Piezoelectric Al1−xScxN thin films: A semiconductor compatible solution for mechanical energy harvesting and sensorsApplied Physics Letters, 2013
- Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonatorsApplied Physics Letters, 2011
- Origin of the Anomalous Piezoelectric Response in WurtziteAlloysPhysical Review Letters, 2010
- Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive CosputteringAdvanced Materials, 2009