Fabrication parameters and NO2 sensitivity of reactively RF-sputtered In2O3 thin films
Authors:
- H SteffesHSH Steffes
- C ImawanCIC Imawan
- F SolzbacherFSF Solzbacher
- E ObermeierEOE Obermeier
- 1 August 2000
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 68 (1-3) , 249-253
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Influence of oxygen pressure on the structure of reactively deposited indium oxide filmsJournal of Materials Chemistry, 1993
- Methods for the preparation of NO, NO2 and H2 sensors based on tin oxide thin films, grown by means of the r.f. magnetron sputtering techniqueSensors and Actuators B: Chemical, 1992
- Correlation between Gas Sensing Properties and Preferential Orientations of Sputtered Tin Oxide FilmsJournal of the Ceramic Society of Japan, 1992