Complementary inverter based on interface doped pentacene
- 9 September 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (11) , 113505
Abstract
An organic complementary metal–oxide–semiconductor (O-CMOS) inverter is presented, which is based on a single pentacene layer acting both as n- and p-type organic semiconductors. The circuit consists of two spatially separated transistors realized by pairs of calcium and gold source and drain electrodes, respectively. The p transistor is obtained by utilizing the conventional pentacene∕SiO2 channel interface whereas the n transistor is realized by doping the SiO2 interface with traces of calcium prior to pentacene deposition. Both, n and p transistors work exclusively in unipolar mode within the range of the supply voltage of 60 V. The O-CMOS inverter works reliably with a gain in between 17 and 24, and the respective electron and hole mobilities were found around 0.1cm2V−1s−1. The circuit shows hysteresis, which can be explained by a gate voltage-dependent electron trapping in the n channel. Electron accumulation can also be realized by the application of a polymethylmethacrylate interlayer between SiO2 and pentacene.Keywords
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