Growth of high-quality inch-diameter heteroepitaxial diamond layers on sapphire substrates in comparison to MgO substrates
Authors:
- Makoto KasuMKMakoto Kasu
- Ryota TakayaRTRyota Takaya
- Seong-Woo KimSKSeong-Woo Kim
- 7 May 2022
- journal article
- research article
- Published by Elsevier in Diamond and Related Materials
- Vol. 126
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Investigation of heterostructure between diamond and iridium on sapphireDiamond and Related Materials, 2008
- 2 W/mm output power density at 1 GHz for diamond FETsElectronics Letters, 2005
- High Carrier Mobility in Single-Crystal Plasma-Deposited DiamondScience, 2002
- Fabrication of Epitaxial Diamond Thin Film on IridiumJapanese Journal of Applied Physics, 1997
- The measurement of thermal properties of diamondDiamond and Related Materials, 1997
- Epitaxial Growth of Diamond on IridiumJapanese Journal of Applied Physics, 1996
- Recent Developments in Heteroepitaxial Nucleation and Growth of Diamond on SiliconPhysica Status Solidi (a), 1996
- Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substratePhysical Review B, 1995
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Man-Made DiamondsNature, 1955