Applications of Nanotechnology in Next-Generation Nonvolatile Memories

This publication has 105 references indexed in Scilit:

• A spatially and temporally controlled shape memory process for electrically conductive polymer–carbon nanotube composites
  Soft Matter, 2012
• Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise
  Journal of Applied Physics, 2012
• Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant
  Journal of Materials Chemistry, 2011
• A fast and low-power microelectromechanical system-based non-volatile memory device
  Nature Communications, 2011
• Comparison of Charge Storage Behavior of Electrons and Holes in a Continuous Ge Nanocrystal Layer
  Nanoscience and Nanotechnology Letters, 2010
• Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy
  Microelectronic Engineering, 2009
• NEMS switch with 30nm-thick beam and 20nm-thick air-gap for high density non-volatile memory applications
  Solid-State Electronics, 2008
• Metal nano-floating gate memory devices fabricated at low temperature
  Microelectronic Engineering, 2006
• NVM based on FinFET device structures
  Solid-State Electronics, 2005
• Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer
  Solid-State Electronics, 2002