Effect of Ga incorporation in sequentially prepared CuInS2 thin film absorbers
Authors:
- A. NeisserANA. Neisser
- I. HengelIHI. Hengel
- R. KlenkRKR. Klenk
- Th.W. MatthesTMTh.W. Matthes
- J. Álvarez-Garcı́aJÁJ. Álvarez-Garcı́a
- A. Pérez-Rodrı́guezAPA. Pérez-Rodrı́guez
- A. Romano-Rodrı́guezARA. Romano-Rodrı́guez
- M.-Ch. Lux-SteinerMLM.-Ch. Lux-Steiner
- 1 March 2001
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 67 (1-4) , 97-104
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- MicroRaman scattering from polycrystalline CuInS 2 films: structural analysisThin Solid Films, 2000
- Efficient thin-film solar cells prepared by a sequential processSemiconductor Science and Technology, 1998
- Cu(In1-xGax)S2 Thin Films Prepared by Sulfurization of Precursors Consisting of Metallic and Gallium Sulfide LayersJapanese Journal of Applied Physics, 1998
- Over 10% efficient CuInS2 solar cell by sulfurizationSolar Energy Materials and Solar Cells, 1997
- Properties of CuInS2 thin films grown by a two-step process without H2SSolar Energy Materials and Solar Cells, 1997
- Sequential processes for the deposition of polycrystalline Cu(In,Ga)(S,Se)2 thin films: Growth mechanism and devicesSolar Energy Materials and Solar Cells, 1996
- Improved open circuit voltage in CuInS/sub 2/-based solar cells1996
- Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors1996
- The Concentration Dependence of the Band Gap for CuGaxIn1-xS2 and AgGaxIn1-xS2 Solid SolutionsPhysica Status Solidi (a), 1986
- Growth of Single Crystals of CuGaS2and CuGa1-xInxS2in In SolutionJapanese Journal of Applied Physics, 1972