Cu(In1-xGax)S2 Thin Films Prepared by Sulfurization of Precursors Consisting of Metallic and Gallium Sulfide Layers
Authors:
- Tsuyoshi OhashiTOTsuyoshi Ohashi
- Masaki WakamoriMWMasaki Wakamori
- Yoshio HashimotoYHYoshio Hashimoto
- Kentaro ItoKIKentaro Ito
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12R) , 6530-6534
Abstract
Cu(In1-x Gax)S2 alloy thin films were prepared by annealing Cu/In/GaS precursors under a H2S atmosphere. The adhesion of the film to a Mo-coated soda-lime glass substrate was improved by introducing a GaS deposit as the first precursor layer. Optical transmission measurements revealed that the band gap of the thinner alloy film shifts from 1.42 to 2.41 eV with increasing composition ratio x. This sulfurization process, however, does not give rise to a single-phase thick Cu(In1-x Gax)S2 alloy film when x is larger than 0.2. Therefore, the composition of Ga in the film should be restricted to a smaller amount. A solar cell of over 10% efficiency has been obtained using the thin film prepared from the precursor with composition ratios of Cu/(In+Ga) = 1.2 and Ga/(In+Ga) = 0.05.Keywords
This publication has 9 references indexed in Scilit:
- Sequential processes for the deposition of polycrystalline Cu(In,Ga)(S,Se)2 thin films: Growth mechanism and devicesSolar Energy Materials and Solar Cells, 1996
- Influence of KCN treatment on CuInS2 thin filmsApplied Surface Science, 1996
- Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphereApplied Physics Letters, 1995
- Experiments on the microstructure of evaporated CuInS2 thin filmsThin Solid Films, 1995
- In2O3/CdS/CuInS2 Thin-Film Solar Cell with 9.7% EfficiencyJapanese Journal of Applied Physics, 1994
- Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cellProgress in Photovoltaics: Research and Applications, 1994
- CuInSe2-based solar cells by Se-vapor selenization from Se-containing precursorsSolar Energy Materials and Solar Cells, 1994
- Stoichiometry control over a wide composition range of sputtered CuGaxIn(1−x)Se2Applied Physics Letters, 1994
- Graded-band-gap pGa1−xAlxAs-nGaAs heterojunction solar cellsJournal of Applied Physics, 1975