Modeling and Analysis of High-Q Resonant-Fin Transistors

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Abstract
This article presents a method for modeling high-Q resonant-fin transistors with focus on circuit design simulations. The model is implemented for simulations in a SPICE-like design environment and is based on two basic properties of the resonator device: the mechanical spectral behavior and the electro-mechanical-transfer function. The spectral model operates in the mechanical pressure regime, while the mobility model converts this pressure into a mobility change inside the channel of the transistor and is hence, generating an ac current at the output of the device. The model also includes the electrical transistor characteristic for the input and the output of the resonator. This enables accurate and fast circuit simulations with a standard SPICE simulator, e.g., for the design of frequency synthesizer circuits. The model is validated against finite element method (FEM) simulations at an artificially damped quality factor of Q= 500. Also, simulation results for a quality factor of Q = 50,000 are shown, to prove the full functionality of the electrical model.
Funding Information
  • Austrian Federal Ministry for Digital and Economic Affairs
  • Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung
  • Christian Doppler Forschungsgesellschaft

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