Electrical and Optical Properties of Si-SnO2 Heterojunctions
Authors:
- Taneo NishinoTNTaneo Nishino
- Yoshihiro HamakawaYHYoshihiro Hamakawa
- 1 September 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (9)
Abstract
Electrical and optical properties have been investigated on Si–SnO2 heterojunctions. Semiconducting SnO2 film has been grown by a successive oxidation of the evaporated tin on the (111) surface of silicon single crystal. The SnO2 film shows the properties of a degenerate n-type semiconductor having the band gap energy of 3.5 eV. The current-voltage characteristics of Si–SnO2 n–n heterojunction represent a good rectification. The photovoltage measurements demonstrate that the Si–SnO2 n–n heterojunction has the photoresponse in the wide wavelength region from 400 to 1200 mµ at room temperature. The energy band diagram of Si–SnO2 n–n heterojunction is determined from the results of these electrical and optical measurements.Keywords
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