Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn δ-layer
Authors:
- S.V. ZaitsevSZS.V. Zaitsev
- V.D. KulakovskiiVKV.D. Kulakovskii
- M.V. DorokhinMDM.V. Dorokhin
- Yu. A. DanilovYDYu. A. Danilov
- P.B. DeminaPDP.B. Demina
- M.V. SapozhnikovMSM.V. Sapozhnikov
- O.V. VikhrovaOVO.V. Vikhrova
- B.N. ZvonkovBZB.N. Zvonkov
- 1 February 2009
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 41 (4) , 652-654
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Electrical spin injection in forward biased Schottky diodes based on InGaAs–GaAs quantum well heterostructuresApplied Physics Letters, 2006
- Theory of ferromagnetic (III,Mn)V semiconductorsReviews of Modern Physics, 2006
- Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wellsPhysical Review B, 2005
- Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductorsPhysical Review B, 2005
- High Temperature Ferromagnetism in GaAs-Based Heterostructures with MnDopingPhysical Review Letters, 2005
- Effect of an interfacial oxide layer on the electroluminescence efficiency of metal-quantum-confined semiconductor heterostructuresSemiconductors, 2005
- Spintronics: Fundamentals and applicationsReviews of Modern Physics, 2004
- 1.3–1.5 µm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructuresSemiconductor Science and Technology, 2004
- Electrical spin injection in a ferromagnetic semiconductor heterostructureNature, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998