High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

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Abstract
The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its redox reaction with an active metal electrode, so the obtained RRAMs are typically plagued by inferior performance and reliability. Here, we report a strategy to develop high-performance flexible RRAMs by using graphene oxidized with a perpendicular oxidation gradient as the resistive layer. In contrast to a homogeneous oxide, this graphene together with its distinctive inter-layer oxygen diffusion path enables excellent oxygen ion/vacancy diffusion. Without an interfacial redox reaction, oxygen ions can diffuse to form conductive filaments with two inert metal electrodes by applying a bias voltage. Compared with state-of-the-art graphene oxide RRAMs, these graphene RRAMs have shown superior performance including a high on–off current ratio of ∼105, long-term retention of ∼106 s, reproducibility over 104 cycles and long-term flexibility at a bending strain of 0.6%, indicating that the material has great potential in wearable smart data-storage devices.
Funding Information
  • National Natural Science Foundation of China (51272256)
  • National Natural Science Foundation of China (61422406)
  • National Natural Science Foundation of China (61574143)
  • National Natural Science Foundation of China (51532008)
  • National Natural Science Foundation of China (61704175)
  • National Natural Science Foundation of China (51502304)
  • National Natural Science Foundation of China (61704175)
  • Chinese Academy of Sciences (XDB30000000)
  • Chinese Academy of Sciences (ZDBS-LY-JSC027)
  • Liaoning Revitalization Talents Program (XLYC1807109)
  • National Key Research and Development Program of China (2016YFB0401104)
  • Shenyang National Laboratory for Materials Science
  • Institute of Metal Research, Chinese Academy of Sciences
  • State Key Laboratory of Luminescence and Applications (L2019F28)
  • Natural Science Foundation of Shandong Province (ZR2019ZD49)

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