Record performance Top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets
- 1 December 2017
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 17.1.1-17.1.4
Abstract
We report high performance, dry etched In 0.53 Ga 0.47 As vertical nanowire and vertical nanosheet devices, fabricated using a VLSI compatible process flow. Scaling the effective-oxide-thickness in combination with (NH4)2S channel treatment and forming gas anneal improves the device performance, in terms of Q (Gm/SS), by over 55%. At V DS = 0.5V, the devices exhibit a minimum SS = 63mV/dec, I on = 397μA/μm at Ioff = 100nA/μm, peak Gm = 1.6mS/μm and maximum Q = 21. These values are the best reported in literature for vertical IIIV devices. A reliability analysis puts these vertical MOSFETs in line with other IIIV devices with similar gate stack, indicating that the process flow does not introduce additional interface defects.Keywords
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