Role of the Ge surface during the end of range dissolution
Open Access
- 15 October 2012
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 101 (16) , 162103
Abstract
We investigated the structure of end-of-range (EOR) defects in Ge and the role played by the surface during their dissolution caused by annealing. Ge samples were amorphized with Ge+ ions at two different energies (30 and 100 keV) in order to induce, after solid phase epitaxial regrowth, the formation of EOR band at different depths. High resolution x-ray diffraction and transmission electron microscopy showed that the EOR population consists mainly on small defects and few dislocation loops lying on 〈001〉 planes. The deepest EOR defects are more stable during thermal annealing demonstrating the role of the surface during their dissolution.Keywords
This publication has 18 references indexed in Scilit:
- Fluorine in Ge: Segregation and EOR-defects stabilizationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012
- End-of-range defects in germanium and their role in boron deactivationApplied Physics Letters, 2010
- Transient enhanced diffusion of B mediated by self-interstitials in preamorphized GeApplied Physics Letters, 2010
- End of range defects in GeJournal of Applied Physics, 2009
- High-resolution X-ray diffraction by end of range defects in self-amorphized GeMaterials Science and Engineering: B, 2008
- Activation and carrier mobility in high fluence B implanted germaniumApplied Physics Letters, 2008
- Regrowth-related defect formation and evolution in 1MeV amorphized (001) GeApplied Physics Letters, 2007
- Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germaniumApplied Physics Letters, 2005
- The role of the surface in transient enhanced diffusionApplied Physics Letters, 1995
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968