Fuccio Cristiano

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

Using Localized Surface Plasmon Resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal a phenomenon, unique to embedded nanocrystals, with the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration.

Ultraviolet Nanosecond Laser Annealing (LA) is a powerful tool for both fundamental investigations of ultrafast, nonequilibrium phase-change phenomena and technological applications (e.g., the processing of 3D sequentially integrated nano-electronic devices) where strongly confined heating and melting is desirable. Optimizing the LA process along with the experimental design is challenging, especially when involving complex 3D-nanostructured systems with various shapes and phases. To this purpose, it is essential to model critical nanoscale physical LA-induced phenomena, such as shape changes or formation and evolution of point and extended defects. To date, LA simulators are based on continuum models, which cannot fully capture the microscopic kinetics of a solid–liquid interface. In this work a fully atomistic LA simulation methodology is presented, based on the parallel coupling of a continuum, finite elements, μm-scale electromagnetic-thermal solver with a super-lattice Kinetic Monte Carlo atomistic model for melting. Benchmarks against phase-field models and experimental data validate the approach. LA of a Si(001) surface is studied varying laser fluence and pulse shape, assuming both homogeneous and inhomogeneous nucleation, revealing how liquid Si nuclei generate, deform and coalesce during irradiation. The proposed methodology is applicable to any system where the atom kinetics is determined by a strongly space- and time-dependent field, such as temperature or strain.

We investigated the structure of end-of-range (EOR) defects in Ge and the role played by the surface during their dissolution caused by annealing. Ge samples were amorphized with Ge⁺ ions at two different energies (30 and 100 keV) in order to induce, after solid phase epitaxial regrowth, the formation of EOR band at different depths. High resolution x-ray diffraction and transmission electron microscopy showed that the EOR population consists mainly on small defects and few dislocation loops lying on 〈001〉 planes. The deepest EOR defects are more stable during thermal annealing demonstrating the role of the surface during their dissolution.

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si_0.8Ge_0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.