Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
Authors:
- W.C. ShihWSW.C. Shih
- R.H. HorngRHR.H. Horng
- C.E. LeeCLC.E. Lee
- W.Y. LinWLW.Y. Lin
- J.S. FangJFJ.S. Fang
- 24 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 17 (2) , 288-290
Abstract
Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.Keywords
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