Total Ionizing Dose Effects in NOR and NAND Flash Memories
Authors:
- Angelo ViscontiAVAngelo Visconti
- Mauro BonanomiMBMauro Bonanomi
- S. BeltramiSBS. Beltrami
- Jim R. SchwankJSJim R. Schwank
- Marty R. ShaneyfeltMSMarty R. Shaneyfelt
- Philippe PailletPPPhilippe Paillet
- 20 August 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 54 (4) , 1066-1070
Abstract
We irradiated floating gate (FG) memories with nor and nand architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and Upsi-rays. Two classes of phenomena are responsible for charge loss from programmed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from Upsi-rays, whereas the use of X-rays results in dose enhancement effects.Keywords
This publication has 19 references indexed in Scilit:
- A review of ionizing radiation effects in floating gate memoriesIEEE Transactions on Device and Materials Reliability, 2004
- Charge loss after /sup 60/Co irradiation of flash arraysIEEE Transactions on Nuclear Science, 2004
- Total ionizing dose effects on flash memories2002
- SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory2002
- Effects of e-beam mail sanitizing process on commercial electronics2002
- Radiation effects on advanced flash memoriesIEEE Transactions on Nuclear Science, 1999
- Flash memory cells-an overviewProceedings of the IEEE, 1997
- Altitude and latitude variations in avionics SEU and atmospheric neutron fluxIEEE Transactions on Nuclear Science, 1993
- Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxidesIEEE Transactions on Nuclear Science, 1988
- The Response of MOS Devices to Dose-Enhanced Low-Energy RadiationIEEE Transactions on Nuclear Science, 1986