Abstract
We fabricated arrays of circular, square, and triangular air holes in GaN by the conventional method using the electron beam lithography and reactive ion etching. The vertex radius of curvature for the square and triangular holes was reduced by shape modification. The minimum vertex radius of curvature for the 100 nm size square and triangular holes were 17 and 11 nm, respectively.
Funding Information
  • Japan Society for the Promotion of Science

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