Electrical and interfacial properties of Au/n-InP Schottky contacts with nickel phthalocyanine (NiPc) interlayer
- 2 October 2014
- journal article
- Published by Springer Nature in Indian Journal of Physics
- Vol. 89 (5) , 463-469
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayerThin Solid Films, 2012
- Rectification and barrier height inhomogeneous in Rhodamine B based organic Schottky diodeSynthetic Metals, 2011
- Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilmsMicroelectronic Engineering, 2010
- Fabrication and electrical characteristics of Schottky diode based on organic materialMicroelectronic Engineering, 2008
- Some electrical properties of polyaniline/p-Si/Al structure at 300K and 77K temperaturesMicroelectronic Engineering, 2008
- On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structuresMicroelectronic Engineering, 2008
- Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contactsMicroelectronic Engineering, 2000
- Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interfaceJournal of Applied Physics, 1999
- Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneitiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999
- On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriersSolid-State Electronics, 1986