Junction Temperature in Ultraviolet Light-Emitting Diodes
Authors:
- 1 October 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (10R)
Abstract
The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 295 and 375 nm, respectively, are measured using the temperature coefficient of diode-forward voltage. An analysis of the experimental method reveals that the diode-forward voltage has a high accuracy of ±3°C. A comprehensive theoretical model for the dependence of diode-forward voltage (V f) on junction temperature (T j) is developed taking into account the temperature dependence of the energy gap and the temperature coefficient of diode resistance. The difference between the junction voltage temperature coefficient (dV j/dT) and the forward voltage temperature coefficient (dV f/dT) is shown to be caused by diode series resistance. The data indicate that the n-type neutral regions are the dominant resistive element in deep-UV devices. A linear relationship between junction temperature and current is found. Junction temperature is also measured by the emission-peak-shift method. The high-energy slope of the spectrum is explored in the measurement of carrier temperature.Keywords
This publication has 15 references indexed in Scilit:
- Temperature-dependent contact resistivity of the nonalloyed ohmic contacts to p-GaNJournal of Applied Physics, 2004
- Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levelsApplied Physics Letters, 2004
- High-power UV InGaN/AlGaN double-heterostructure LEDsJournal of Crystal Growth, 1998
- Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodesJournal of Applied Physics, 1996
- p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of MgApplied Physics Letters, 1994
- Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasersApplied Physics Letters, 1993
- Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8-beam laser diode arrayJournal of Applied Physics, 1992
- Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobeApplied Physics Letters, 1992
- Temperature rise and thermal rise-time measurements of a semiconductor laser diodeReview of Scientific Instruments, 1992
- Temperature distribution along the striped active region in high-power GaAlAs visible lasersJournal of Applied Physics, 1985