Magnetic resonance studies of InGaN-based quantum well diodes
Authors:
- 1 March 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3) , 252-256
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wellsApplied Physics Letters, 1997
- Paramagnetic resonance in GaN-based single quantum wellsApplied Physics Letters, 1997
- Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonanceSolid-State Electronics, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitionsApplied Physics Letters, 1996
- Properties of the yellow luminescence in undoped GaN epitaxial layersPhysical Review B, 1995
- Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor depositionPhysical Review B, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Electron-spin-resonance studies of donors in wurtzite GaNPhysical Review B, 1993
- Optical Detection of Conduction Electron Spin Resonance in Semiconductors and its Application to k · p Perturbation Theory1984