Arsenic antisite defectandEL2 in GaAs
Authors:
- 15 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (2) , 1332-1335
Abstract
The microscopic structure of the paramagnetic anion antisite defect in semi-insulating GaAs was determined by optically detected electron-nuclear double resonance (ODENDOR). It is an arsenic-antisite–arsenic-interstitial (-) pair. It is shown, by optically detected ESR and ODENDOR experiments, that its energy levels and optical properties in the diamagnetic state are those of the EL2 defect.
Keywords
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