Electromigration challenges for advanced on-chip Cu interconnects
Authors:
- Baozhen LiBLBaozhen Li
- Cathryn ChristiansenCCCathryn Christiansen
- Dinesh BadamiDBDinesh Badami
- Chih-Chao YangCYChih-Chao Yang
- 1 April 2014
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 54 (4) , 712-724
Abstract
No abstract availableThis publication has 36 references indexed in Scilit:
- Materials and scaling effects on on-chip interconnect reliabilityMRS Proceedings, 2013
- The electromigration short — Length effect and its impact on circuit reliability2013
- The scaling of electromigration lifetimes2012
- In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k InterconnectsIEEE Electron Device Letters, 2012
- Statistical Evaluation of Electromigration Reliability at Chip LevelIEEE Transactions on Device and Materials Reliability, 2010
- Electromigration for microarchitectsACM Computing Surveys, 2010
- Impact of Cu microstructure on electromigration reliability2007
- Threshold electromigration failure time and its statistics for Cu interconnectsJournal of Applied Physics, 2006
- Electromigration Cu mass flow in Cu interconnectionsThin Solid Films, 2006
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976