Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation
- 31 December 2004
- journal article
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 24 (6) , 1633-1636
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol–gelJournal of Applied Physics, 2003
- Properties of ferroelectric films based on Nb-modified PZT produced by PLD techniqueApplied Surface Science, 2003
- Exploring grain size as a cause for “dead-layer” effects in thin film capacitorsApplied Physics Letters, 2002
- Electrode Field Penetration: A New Interpretation of Tunneling Currents in Barium Strontium Titanate (BST) Thin FilmsFerroelectrics, 2002
- Landau Theory-Based Validation of the Fatigue Mechanisms in Sol-Gel and MOCVD PZT Films Using the Correlated Analysis of the Hysteresis Loop ParametersFerroelectrics, 2002
- Effect of Nb doping on the microstructural and electrical properties of the PZT ceramicsJournal of the European Ceramic Society, 2001
- Dipolar Defect Model for Fatigue in Ferroelectric PerovskitesPhysical Review Letters, 1999
- Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integrationJournal of Applied Physics, 1994
- High speed, nondestructive readout from thin-film ferroelectric memoryApplied Physics Letters, 1992
- Examination of barrier layers for lead zirconate titanate thin filmsJournal of Electronic Materials, 1992