Iulian Boerasu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Iulian Boerasu has a total of 44 co-authors. Here are the top co-authors by number of shared publications:
- Maria Jesus Matos Gomes
Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
11 shared publications - Lucian Pintilie
National Institute of Materials Physics Magurele Romania
10 shared publications - Mario Pereira
University of Minho
8 shared publications - Mikhail I. Vasilevskiy
International Iberian Nanotechnology Laboratory (INL)
3 shared publications - Bernard Enrico Watts
Istituto IMEM/CNR
2 shared publications F. Leccabue
Instituto MASPEC/ CNR, Area delle Scienze 37/A I-443010 Fontanini, Parma, Italy
2 shared publications
Latest Publications
- Open Access
Current Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review
Herein, based on the reviewed literature, the current marketability challenges faced by kesterite CZTS based-solar cells is addressed. A knowledge update about the attempts to reduce the open circuit voltage deficit of kesterite CZTS solar cells will be addressed, with a focus on the impact of Cu/Zn order/disorder and of Se doping. This review also presents the strengths and weaknesses of the most commercially attractive synthesis methods for synthesizing thin kesterite CZTS films for photovoltaic applications.
Open AccessCurrent Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review
Herein, based on the reviewed literature, the current marketability challenges faced by kesterite CZTS based-solar cells is addressed. A knowledge update about the attempts to reduce the open circuit voltage deficit of kesterite CZTS solar cells will be addressed, with a focus on the impact of Cu/Zn order/disorder and of Se doping. This review also presents the strengths and weaknesses of the most commercially attractive synthesis methods for synthesizing thin kesterite CZTS films for photovoltaic applications.
- Open Access
Facile Modification of Flexible Electrodes via Laser Transfer
In this work, we report the modification of commercially available electrochemical electrodes with tin oxide (SnO2) and Pd doped SnO2 (Pd-SnO2) via pulsed laser-induced forward transfer (LIFT). The pulsed light irradiation working as in situ pulsed photo-thermal treatment allows for the transfer of SnO2 and Pd-SnO2 from UV absorbing metal complex precursors onto flexible, commercially available screen-printed electrodes. The laser transfer conditions are optimized and the material transferred under different conditions is evaluated morphologically and chemically, and its functionality is tested against the detection of copper ions. For example, by applying laser fluences in the range 100–250 mJ/cm2, the shape and the size of the transferred features ranges from nano-polyhedrons to near corner-grown cubic Pd-SnO2 or near cubic Pd-SnO2. In addition, the EDX analysis is consistent with the XPS findings, i.e., following laser transfer, Pd amounts lower than 0.5% are present in the Pd-SnO2 pixels. First sensing tests were carried out and the transferred Pd-SnO2 proved to enhance the cathodic peak when exposed to Cu(II) ions. This photo-initiated fabrication technology opens a promising way for the low-cost and high-throughput manufacturing of metal oxides as well as for electrodes for heavy metal ion detection.
Open AccessFacile Modification of Flexible Electrodes via Laser Transfer
In this work, we report the modification of commercially available electrochemical electrodes with tin oxide (SnO2) and Pd doped SnO2 (Pd-SnO2) via pulsed laser-induced forward transfer (LIFT). The pulsed light irradiation working as in situ pulsed photo-thermal treatment allows for the transfer of SnO2 and Pd-SnO2 from UV absorbing metal complex precursors onto flexible, commercially available screen-printed electrodes. The laser transfer conditions are optimized and the material transferred under different conditions is evaluated morphologically and chemically, and its functionality is tested against the detection of copper ions. For example, by applying laser fluences in the range 100–250 mJ/cm2, the shape and the size of the transferred features ranges from nano-polyhedrons to near corner-grown cubic Pd-SnO2 or near cubic Pd-SnO2. In addition, the EDX analysis is consistent with the XPS findings, i.e., following laser transfer, Pd amounts lower than 0.5% are present in the Pd-SnO2 pixels. First sensing tests were carried out and the transferred Pd-SnO2 proved to enhance the cathodic peak when exposed to Cu(II) ions. This photo-initiated fabrication technology opens a promising way for the low-cost and high-throughput manufacturing of metal oxides as well as for electrodes for heavy metal ion detection.
- Open Access
Influence of the Iron as a Dopant on the Refractive Index of WO3
Results on studies of pure tungsten oxide WO3 and 2, 3 and 4% Fe-doped WO3 grown on the sapphire substrates by reactive pulsed laser deposition technique are reported. From X-ray diffraction it results that the crystalline structures changed with the substrate temperature and the peaks diffraction having a small shift by the amount of Fe content in WO3 lattice was noticed. Scanning electron microscopy presented a random behavior of WO3 nanocrystallites size with substrate temperatures. In the presence of 2% Fe-doped WO3, the nanocrystallites size varied gradually from 60 nm to 190 nm as substrate temperature increased. The transmission spectra of the pure and 2, 3 and 4% Fe-doped WO3 films were obtained within the 300–1200 nm spectral range. The refractive index of WO3 and Fe-doped WO3 layers were calculated by the Swanepoel method. The refractive index of pure WO3 shows a variation from 2.35–1.90 and for 2% Fe-doped WO3 from 2.30–2.00, as the substrate temperature increased. The contents of 3 and 4% Fe-doped WO3 presented nearly identical values of the refractive index with pure and 2% Fe-doped WO3, in error limits, at 600 °C. The optical band gap changes with substrate temperature from 3.2 eV to 2.9 eV for pure WO3 and has a small variation with the Fe.
Open AccessInfluence of the Iron as a Dopant on the Refractive Index of WO3
Results on studies of pure tungsten oxide WO3 and 2, 3 and 4% Fe-doped WO3 grown on the sapphire substrates by reactive pulsed laser deposition technique are reported. From X-ray diffraction it results that the crystalline structures changed with the substrate temperature and the peaks diffraction having a small shift by the amount of Fe content in WO3 lattice was noticed. Scanning electron microscopy presented a random behavior of WO3 nanocrystallites size with substrate temperatures. In the presence of 2% Fe-doped WO3, the nanocrystallites size varied gradually from 60 nm to 190 nm as substrate temperature increased. The transmission spectra of the pure and 2, 3 and 4% Fe-doped WO3 films were obtained within the 300–1200 nm spectral range. The refractive index of WO3 and Fe-doped WO3 layers were calculated by the Swanepoel method. The refractive index of pure WO3 shows a variation from 2.35–1.90 and for 2% Fe-doped WO3 from 2.30–2.00, as the substrate temperature increased. The contents of 3 and 4% Fe-doped WO3 presented nearly identical values of the refractive index with pure and 2% Fe-doped WO3, in error limits, at 600 °C. The optical band gap changes with substrate temperature from 3.2 eV to 2.9 eV for pure WO3 and has a small variation with the Fe.
- 31 December 2007
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 27 (8-9) , 2945-2948
Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates
- 31 December 2007
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 27 (8-9) , 2945-2948
Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates
- 11 December 2007
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 93 (1) , 119-125
RELATION BETWEEN PROCESSING, MICROSTRUCTURE AND ELECTRIC FIELD-DEPENDENT DIELECTRIC PROPERTIES OF Ba0.3Sr0.7TiO3 THIN FILMS ON ALUMINA SUBSTRATES
- 11 December 2007
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 93 (1) , 119-125
RELATION BETWEEN PROCESSING, MICROSTRUCTURE AND ELECTRIC FIELD-DEPENDENT DIELECTRIC PROPERTIES OF Ba0.3Sr0.7TiO3 THIN FILMS ON ALUMINA SUBSTRATES
- 1 June 2007
- Published by Elsevier in Thin Solid Films
- Vol. 515 (16) , 6557-6561
Effects of porosity on ferroelectric properties of Pb(Zr0.2Ti0.8)O3 films
- 1 June 2007
- Published by Elsevier in Thin Solid Films
- Vol. 515 (16) , 6557-6561
Effects of porosity on ferroelectric properties of Pb(Zr0.2Ti0.8)O3 films
- 15 December 2005
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 98 (12) , 124104
Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptorlike level. The model is applied on a set of metal- -metal samples with different ratios, deposited by different methods, and having different thicknesses, electrode materials, and electrode areas. Values around were estimated for the hole concentration from capacitance-voltage measurements. The space-charge density near the electrode, estimated from current-voltage measurements, is in the range. The total thickness of the interface layer ranges from , depending on the ratio, on the shape of the hysteresis loop, and on the electrode material. The simulated characteristics is fitted to the experimental one using the potential barrier and Richardson’s constant as parameters. The potential barrier is determined to be in the range and Richardson’s constant is .- 15 December 2005
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 98 (12) , 124104
Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptorlike level. The model is applied on a set of metal- -metal samples with different ratios, deposited by different methods, and having different thicknesses, electrode materials, and electrode areas. Values around were estimated for the hole concentration from capacitance-voltage measurements. The space-charge density near the electrode, estimated from current-voltage measurements, is in the range. The total thickness of the interface layer ranges from , depending on the ratio, on the shape of the hysteresis loop, and on the electrode material. The simulated characteristics is fitted to the experimental one using the potential barrier and Richardson’s constant as parameters. The potential barrier is determined to be in the range and Richardson’s constant is .- 31 December 2004
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 24 (6) , 1633-1636
Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation
- 31 December 2004
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 24 (6) , 1633-1636
Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation
- 21 September 2004
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 115 (2-3) , 185-190
Pyroelectric current spectroscopy: example of application on Nb doped Pb(Zr0.92Ti0.08)O3 ceramics for infrared detection
- 21 September 2004
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 115 (2-3) , 185-190
Pyroelectric current spectroscopy: example of application on Nb doped Pb(Zr0.92Ti0.08)O3 ceramics for infrared detection