Stress-induced current in thin silicon dioxide films
Authors:
- MoazzamiMOMoazzami
- Chenming HuCHChenming Hu
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 139-142
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide filmsIEEE Electron Device Letters, 1991
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin OxidesJournal of the Electrochemical Society, 1985
- Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunnelingJournal of Vacuum Science and Technology, 1982
- Carrier trapping hysteresis in MOS transistorsPhysica Status Solidi (a), 1970