3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt–Shunt Feedback Technique
Authors:
- Yo-Sheng LinYLYo-Sheng Lin
- Shey-Shi LuSLShey-Shi Lu
- 4 September 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 55 (9) , 1832-1843
Abstract
In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.Keywords
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