The structural characterisation of HWCVD-deposited nanocrystalline silicon films
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Open Access
- 1 January 2009
- journal article
- Published by Academy of Science of South Africa in South African Journal of Science
- Vol. 105 (1/2)
Abstract
Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30–50% and the nc-Si crystallite size was in the range 20–35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.Keywords
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