Charge transport in SiCN/Si heterostructures
Authors:
- A.V. SukachASA.V. Sukach
- V.V. TetyorkinVTV.V. Tetyorkin
- А.і. ТkachukАТА.і. Тkachuk
- A.O. KozakAKA.O. Kozak
- O.K. PoradaOPO.K. Porada
- V.I. IvashchenkoVIV.I. Ivashchenko
- 7 February 2022
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 143
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazaneThin Solid Films, 2008
- Silicon carbonitride ceramics derived from polysilazanes Part II. Investigation of electrical propertiesJournal of the European Ceramic Society, 2000
- Progress in silicon-based non-oxide structural ceramicsInternational Journal of Refractory Metals and Hard Materials, 1997
- Influence of temperature on the properties of
SiC N H films prepared by plasma-enhanced chemical vapour depositionMaterials Science and Engineering: B, 1994 - The role of dangling bonds in the properties of surfaces and interfaces of semiconductorsRevue de Physique Appliquée, 1990
- Studies of the theory of single and double injections in solids with a Gaussian trap distributionSolid-State Electronics, 1976
- Space-charge limited currents in insulators with the Gaussian distribution of trapsCzechoslovak Journal of Physics, 1972
- Space-Charge-Limited Current in Neutron-Irradiated Silicon, with Evidence of the Complete Lampert TrianglePhysical Review B, 1969
- Space-Charge-Limited Currents in Organic CrystalsJournal of Applied Physics, 1962
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955